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16 8V 4.5V
10 Vds=5V 8 25C 125C 2V
12 3V 2.5V
Id (A)
8
Id(A)
Vgs=1.5V 2 3 4 5
6
4 4
2
0 0 1 Vds (Volts) Fig 1: On-Region Characteristics 140
0 0 0.5 1 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1.8 Vgs=2.5V
Normalized On-Resistance
120
1.6 1.4 1.2 1 0.8
Id=2.0A Vgs=1.8V Id=1.0A Vgs=4.5V Id=2.2A
Rds(on) (m:)
Vgs=1.8V 100 Vgs=2.5V 80 Vgs=4.5V 60 0 2 4 6 8 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
180 160 Id=2.2A
1E+01 1E+00 125C 1E-01
Rds(on) (m:)
140
Is (A)
120 100 80 60 1 2 3 4 5
1E-02 25C 1E-03
125C
25C
1E-04 1E-05
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=10V Id=2.2A
1000
4
800
Capacitance (pF)
Ciss 600
Vgs (Volts)
3
2
400 Coss 200 Crss
1
0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max)=150C Ta=25C 10.0 100Ps
16 Tj(max)=150C Ta=25C 12
Id (Amps)
10Ps 0.1s 10ms 1ms
Power (W)
Rds(on) limited
8
1.0
4 1s 0.1 0.1 10s DC 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd P T Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

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